Luderer, ChristophChristophLudererMeßmer, Christoph AlexanderChristoph AlexanderMeßmerHermle, MartinMartinHermleBivour, MartinMartinBivour2022-03-062022-03-062020https://publica.fraunhofer.de/handle/publica/26320010.1109/jphotov.2020.2983989To improve silicon heterojunction solar cells even further, minimizing transport losses within the charge carrier selective junctions and layers is mandatory. With this in mind, we present a systematic quantification of the transport losses of the electron (contact resistivity, rc ≈ 30 mO·cm²) and hole ( rc ≈ 240 mO·cm²) contact of our silicon heterojunctions, which enable fill factors above 80% on cell level. We identify the cause of the higher transport losses of the hole contact to be the intrinsic a-Si:H and ITO layer and that these layers are also responsible for a limited thermal stability. Furthermore, temperature-dependent I-V measurements reveal the nonohmic nature of the transport losses in case that intrinsic a-Si:H and transparent conductive oxide are part of the heterojunction.enPhotovoltaikSilicium-PhotovoltaikHerstellung und Analyse von hocheffizienten Si-Solarzellen621697journal article