Biro, L.P.L.P.BiroGyulai, J.J.GyulaiRyssel, H.H.RysselFrey, L.L.FreyKormany, T.T.KormanyTuan, N.M.N.M.Tuan2022-03-032022-03-031993https://publica.fraunhofer.de/handle/publica/18337510.1016/0168-583X(93)96191-EThe junction depth reduction for B implanted under PA conditions in Si was investigated.It was found that low energy implantation and short annealing times promote higher values of junction depth reduction.Under PA conditions, an altered defect structure is produced which influences the diffusion of dopants.The combination of the modified defect distribution with low dose rate implantation may reduce the number of scattering centers for charge carriers, which affects sheet resistance.enboronimplantationion implantationlaserphoton assistancepn-junctionprofilesiliconthermal annealing670620530539journal article