Bender, G.G.BenderLarkins, E.C.E.C.LarkinsSchneider, H.H.SchneiderRalston, J.D.J.D.RalstonKoidl, P.P.Koidl2022-03-092022-03-091994https://publica.fraunhofer.de/handle/publica/323173We study the limits of pseudomorphic strain in MBE grown In0.2Ga0.8As/GaAs multiple quantum well structures and the influence of lattice relaxation on the optoelectronic properties of high-speed p-i-n photodetectors with MQWs in the intrinsic region. High-resolution X-ray diffraction yields the degree of lattice relaxation. For the detectors these results are in agreement with photocurrent spectroscopy measurements and subband calculations. The detectors yield a quantum efficiency of unity, in spite of the onset of lattice relaxation.enInGaAs/GaAs MQWp-i-n photodetectorp-i-n photodetectorRöntgenspektroskopiestrain relaxationVerspannungsrelaxationX-ray spectroscopy621667conference paper