Bollmann, D.D.BollmannHaberger, K.K.HabergerPielmeier, R.R.Pielmeier2022-03-032022-03-031990https://publica.fraunhofer.de/handle/publica/17877010.1016/0169-4332(90)90137-OWith the further shrink of IC dimension, metallization becomes the most crucial layer because conductivity and contact resistivity the RC constants and thus the speed of the circuits. With our Q-swiched Nd:YAG laser we have evaporated different materials (Al, Ti, W, Pt, Au), alloys (Ta-Si) and dielectrics (ZrO sub 2, Al sub 2 O sub 3). We also produced sandwich layers (Al-Au, Ti-Al). The layers were investigated with regard to deposition rate, homogeneity, adhesion; step coverage and surface roughness. Deposition rates in the order of 60 nm/min were achieved. At a power of 10 W and a repetition rate of about 5 kHz we could form ohmic contacts to silicon with a good step coverage in the contact.enablationAufdampfenevaporationHalbleiterlaserMetallisierungmetallizationsemiconductorsiliconSilizium669journal article