Schermer, J.J.SchermerMartinez-Limia, A.A.Martinez-LimiaPichler, P.P.PichlerZechner, C.C.ZechnerLerch, W.W.LerchPaul, S.S.Paul2022-03-042022-03-042008https://publica.fraunhofer.de/handle/publica/21615610.1016/j.sse.2008.04.026The physical concepts developed to describe the transient activation of boron during post-implantation annealing are based on the concurrent formation of complexes comprising boron atoms and self-interstitials. A complete implementation in to TCAD software leads to a high number of equations to be solved which is often inadmissible for multi-dimensional simulations. In this work, a minimum number of such complexes is taken into considerations. We show that such a model is nevertheless able to reproduce profile shape and dopant activation for a large variety of implant and annealing conditions.enboronsiliconclusteringactivationdiffusionboron-interstitial clusterBIC670537journal article