Schraml, MichaelMichaelSchramlPapathanasiou, NiklasNiklasPapathanasiouMay, AlexanderAlexanderMayWeiss, TilmanTilmanWeissErlbacher, TobiasTobiasErlbacher2023-07-102023-07-102023-05-31https://publica.fraunhofer.de/handle/publica/44538010.4028/p-959z1t4H-silicon carbide (SiC) based pin photodiodes with a sensitivity in the vacuum ultraviolet spectrum (VUV) demand newly developed emitter doping profiles. This work features the first ever reported 4H-SiC pin photodiodes with an implanted p-emitter and a noticeable sensitivity at a wavelength of 200 nm. As a first step, Aluminum doping profiles produced by low energy ion implantation in 4H-SiC were characterized by secondary-ion mass spectrometry (SIMS). Photodiodes using these shallow emitters are compared to one with a deep p-emitter doping profile employing IV characteristics and the spectral response. SIMS results demonstrate the possibility of shallow Al-implantation profiles using low implantation energies with all emitter profiles featuring characteristic I-V results. For some shallow doping profiles, a measurable signal at the upper limit of the VUV spectrum could be demonstrated, paving the way towards 4H-SiC pin photodiodes with sensitivities for wavelengths below 200 nm.enphotodiodeUVVUVpin-diodeshallow ion implantationshallow emitterspectral responsivityDDC::600 Technik, Medizin, angewandte Wissenschaften::620 Ingenieurwissenschaften::621 Angewandte Physikjournal article