Tajima, J.J.TajimaPark, Y.K.Y.K.ParkFujita, M.M.FujitaTakai, M.M.TakaiSchork, R.R.SchorkFrey, L.L.FreyRyssel, H.H.Ryssel2022-03-092022-03-092000https://publica.fraunhofer.de/handle/publica/33717110.1109/.2000.9242252-s2.0-78649875506A rapid shrinkage in a minimum feature size of integrated circuits (ICs) requires analysis with an enhanced depth-resolution for dopants in shallow source-drain regions. Rutherford backscattering Spectroscopy (RBS) with medium energy ion scattering (MEIS) for such analysis should meet the requirement of a depth-resolution of less than 5 nm at a depth of 50 nm in the next 5 years. A toroidal electrostatic analyzer (TEA) with an energy resolution of 4×103 has been used to detect scattering ions. Limitation of energy resolution due to Bohr straggling of probe ions at a shallow implanted depth has been taken into account. Arsenic ions were implanted in SiO 2/Si at energy of 5 keV with a dose of 2 × 1015 /cm2. An ultra shallow profile with a pro jected range of 30 nm with a FWHM (full width at half maximum) of 4.7 ± 0.4 nm was non-destructively measured.en670conference paper