Ralston, J.D.J.D.RalstonWeisser, S.S.WeisserEsquivias, I.I.EsquiviasGallagher, D.F.G.D.F.G.GallagherTasker, P.J.P.J.TaskerRosenzweig, JosefJosefRosenzweigFleissner, J.J.Fleissner2022-03-082022-03-081992https://publica.fraunhofer.de/handle/publica/31962610.1109/ISLC.1992.763626A detailed comparison is presented between vertically-compact high-speed GaAs and Insub0.35Gasub0.65As MQW diode laser structures suitable for integration with MODFET driver circuits. Both devices show superior performance, although the advantages of replacing the GaAs QW's with pseudomorphic InGaAs QW's are clearly demonstrated.enmonolithic integrationoptical data linkoptische Data-Verbindungquantum well lasersstrained layerverspannte Schicht621667conference paper