Eschen, WilhelmWilhelmEschenLiu, ChangChangLiuPenagos Molina, Daniel SantiagoDaniel SantiagoPenagos MolinaKlas, RobertRobertKlasLimpert, JensJensLimpertRothhardt, JanJanRothhardt2023-05-232023-05-232023https://publica.fraunhofer.de/handle/publica/44210310.1364/OE.485779We present high-speed and wide-field EUV ptychography at 13.5 nm wavelength using a table-top high-order harmonic source. Compared to previous measurements, the total measurement time is significantly reduced by up to a factor of five by employing a scientific complementary metal oxide semiconductor (sCMOS) detector that is combined with an optimized multilayer mirror configuration. The fast frame rate of the sCMOS detector enables wide-field imaging with a field of view of 100 µm × 100 µm with an imaging speed of 4.6 Mpix/h. Furthermore, fast EUV wavefront characterization is employed using a combination of the sCMOS detector with orthogonal probe relaxation.enMOS devicesOxide semiconductorsjournal article