Zimmermann, H.H.ZimmermannKeller, R.C.R.C.KellerMeisen, P.P.MeisenRichter, H.J.H.J.RichterSeelmann-Eggebert, M.M.Seelmann-Eggebert2022-03-032022-03-031996https://publica.fraunhofer.de/handle/publica/18848110.1007/BF02655022The structure of the interface formed by the reaction of deposited Sn on Hg(0.78)Cd(0.22)Te(111)B was investigated by hemispherically scanned x-ray photo-electron spectroscopy including x-ray photoelectron diffraction (XPD). The interface formation was found to proceed as follows: At the onset of Sn deposition, Hg is expelled and substituted by Sn in the topmost monolayer of the Hg(0.78)Cd(0.22)Te lattice while the zinc-blende structure of the original surface is maintained. With further Sn deposition (and further loss of Hg), an epitaxial layer of cubic SnTe (with inclusions of CdTe) was found to grow. At room temperature, the SnTe growth stopped after a few monolayers, and the epitaxial growth of cubic alpha-Sn was observed to start on top of it. At elevated deposition temperatures, the SnTe intermediate layer continued to grow up to several l00 A.U.enAlpha-SnARXPS depth profilingARXPS Tiefenprofilohmic contactsOhmscher Kontaktphotoelectron diffractionPhotoelektronen-Beugung621667journal article