Töpper, M.M.TöpperNdip, I.I.NdipErxleben, R.R.ErxlebenBrusberg, L.L.BrusbergNissen, N.N.NissenSchröder, H.H.SchröderYamamoto, H.H.YamamotoTodt, G.G.TodtReichl, H.H.Reichl2022-03-112022-03-112010https://publica.fraunhofer.de/handle/publica/36918510.1109/ECTC.2010.5490887Interposers for SiP will become more and more important for advanced electronic systems. But through substrate vias are essential for the 3-D integration. Being a standard for laminate based materials this is much more complex for Si-wafers: High speed etching has to be combined with complex electrical isolation, diffusion barriers and void-free Cu-filling. Without doubt this can be solved in lab-scale but for high production scale cost is a tremendous barrier. Glass wafers with W-plugs have been intensively investigated in this paper. A new acronym has been posted to high-light this technology: TGV for Through Glass Vias. The results of modeling and simulation of TGV at RF/Microwave frequencies showed a very good compromise between wafer thickness, TGV-shape and via diameter for vertical metal plugs with 100 m diameters in 500 m thick glass wafer still very stable for thin film wafer processing without costly temporary wafer bonding processes. Therefore the HermeS® fro m Schott was chosen as the basis for a prototype of a bidirectional 4 × 10 Gbps electro-optical transceiver module. Thin film RDL and bumping of these wafers was possible without any modifications to Si-wafer. First thermal cycles showed very promising results for the reliability of this concept.en621conference paper