Threading dislocations in n- and p-type 4H-SiC material analyzed by etching and synchrotron x-ray topography

Kallinger, B.B.KallingerPolster, S.S.PolsterBerwian, P.P.BerwianFriedrich, J.J.FriedrichMüller, G.G.MüllerDanilewsky, A.N.A.N.DanilewskyWehrhahn, A.A.WehrhahnWeber, A.-D.A.-D.Weber2022-03-042022-03-042011https://publica.fraunhofer.de/handle/publica/22435010.1016/j.jcrysgro.2010.10.145endefectsdopingetchingx-ray topographysilicon carbide670620530548Threading dislocations in n- and p-type 4H-SiC material analyzed by etching and synchrotron x-ray topographyjournal article