As, D.J.D.J.AsBrandt, G.G.BrandtDischler, B.B.DischlerKoidl, P.P.KoidlMaier, M.M.MaierRalston, J.D.J.D.RalstonRamsteiner, M.M.Ramsteiner2022-03-032022-03-031991https://publica.fraunhofer.de/handle/publica/18011010.1063/1.350334Continuous tuning over the entire 8-12 mym wavelength range is demonstrated for the intersubband absorption resonance in n-doped GaAs/AlxGa1-xAs multiple quantum-well structures following partial interdiffusion of the well and barrier layers via rapid thermal annealing. The data indicate that redshifting of the intersubband absorption resonance arises both from interdiffusion-induced modification of the confining potential and from a decrease in the depolarization shift. The later effect is due in part to a decrease in the freecarrier concentration within the Si-doped quantum wells following rapid thermal annealing. Significant diffusion of the localized Si dopant is also observed over the range of annealing temperatures investigated here. Calculated values of the Al-Ga interdiffusion coefficient, as a function of anneal temperature, indicate that Si diffusion through the heterointerfaces contributes substantially to layer intermixing.enGaAsinfrared detectorInfrarotdetektorInterdiffusionintersubband absorptionIntersubband-ResonanzKurzzeittemperungquantum wellsrapid thermal anneal621667530journal article