Kudo, Y.Y.KudoYamada, T.T.YamadaYamaguchi, H.H.YamaguchiMasuzawa, T.T.MasuzawaSaito, I.I.SaitoShikata, S.-i.S.-i.ShikataNebel, C.E.C.E.Nebel2022-03-042022-03-042008https://publica.fraunhofer.de/handle/publica/21694610.1143/JJAP.47.89212-s2.0-59349111530In this study, the field emission properties of P-doped diamond with various surface treatments were measured in order to understand the effects of surface treatments on the barrier height. The emission properties were acquired for diamond with C-reconstructed, oxidized, and H-plasma treated surfaces. The voltage drop across the vacuum was estimated for each surface, using threshold voltage-anode distance (V-d) measurement. The estimated electric fields near the diamond surface were 4.95, 26.6, and 54.1 V/mm for the C-reconstructed, oxidized, and H-plasma treated surfaces, respectively. The barrier height ratio of these surfaces derived from their electric fields was 1 : 3:1 : 4:9, which agrees with the result derived from Fowler-Nordheim plots. Considering the electron affinities of all surfaces and the obtained results, positive electron affinities dominate the field emission properties of the C-reconstructed and oxidized surfaces. An internal barrier due to upward band bending on the H-plasma treated surface limits the field emission properties, even though it has a negative electron affinity. Our results suggest that the emission properties strongly depend on the barrier height, which is modified by surface treatment.enfield emissionFeldemissionP-doped diamondPhosphor-dotierter Diamantsurface terminationbarrier heightelectron affinity667530journal article