Under CopyrightXu, ZongweiZongweiXuSong, Y.Y.SongRommel, MathiasMathiasRommelLiu, T.T.LiuKocher, MatthiasMatthiasKocherHe, Z.D.Z.D.HeWang, H.H.WangYao, B.T.B.T.YaoLiu, L.L.LiuFang, F.Z.F.Z.Fang2022-03-1320.9.20182018https://publica.fraunhofer.de/handle/publica/40160510.24406/publica-fhg-401605en4H-SiCraman spectroscopyion implantationdefect670620530Raman spectroscopy characterization of ion implanted 4H-SiC and its annealing effectsposter