Electrical reliability aspects of through the gate implanted MOS-structures with thin oxides

Jank, M.M.JankLemberger, M.M.LembergerBauer, A.J.A.J.BauerFrey, L.L.FreyRyssel, H.H.Ryssel2022-03-032022-03-032001https://publica.fraunhofer.de/handle/publica/20014310.1016/S0026-2714(01)00053-1en670620530621Electrical reliability aspects of through the gate implanted MOS-structures with thin oxidesjournal article