Krysl, AnastasiyaAnastasiyaKryslBut, Dmytro B.Dmytro B.ButIkamas, KestutisKestutisIkamasYuan, HuiHuiYuanKocybik, MichaelMichaelKocybikBauer, MarisMarisBauerFriederich, FabianFabianFriederichLisauskas, AlvydasAlvydasLisauskasRoskos, Hartmut G.Hartmut G.Roskos2023-01-192023-01-192022https://publica.fraunhofer.de/handle/publica/43411210.1109/IRMMW-THz50927.2022.9896100We present the study on performance optimization and resonant frequency modification of terahertz detectors with the use of hyper-hemispherical silicon superstrate lenses. A series of detectors from 580 GHz to 2 THz which employ a monolithically integrated patch-antenna-coupled field-effect-transistor were fabricated in a commercial 65nm CMOS process of TSMC (Taiwan Semiconductor Manufacturing Company). We demonstrate that the resonance frequency with state-of-the-art optical performance can be efficiently controlled by the selection of a superstrate layer in the frequency range which exceeds 100 GHz. This technique can be employed for post-fabrication tailoring of detector resonance frequencies to target spectral lines.enOptical device fabricationResonant frequencyDetectorsSemiconductor device manufactureOptical detectorsSiliconDielectricsDDC::500 Naturwissenschaften und Mathematikconference paper