Schoepfel, JanJanSchoepfelRücker, HolgerHolgerRückerPohl, NilsNilsPohl2023-08-222023-08-222023https://publica.fraunhofer.de/handle/publica/44852210.1109/SiRF56960.2023.100462752-s2.0-85149395971In this paper, a differential Doherty power amplifier for automotive applications in a 130nm SiGe BiCMOS technology, featuring ft/fmax of 470/650 GHz, is presented. The amplifier achieves a measured, peak power added efficiency of 11.6% with 17.0dBm saturated output power at a frequency of 79GHz. In the 6dB power back-off, the proposed amplifier offers a power added efficiency of 6.1%. For comparison, a reference Class-A amplifier has been designed that achieves an output power of 7.2dBm at the 6dB power back-off with a power added efficiency of 1.8%. Compared to other state-of-the-art Doherty approaches, the proposed architecture first time proves the traditional transmission line-based impedance inversion in the automotive frequency range from 76GHz to 81GHz.enDohertymillimeter wave integrated circuitspower amplifiersSilicon germanium (SiGe)conference paper