Pichler, P.P.PichlerMartinez-Limia, A.A.Martinez-LimiaKampen, C.C.KampenBurenkov, A.A.BurenkovSchermer, J.J.SchermerPaul, S.S.PaulLerch, W.W.LerchGelpey, J.J.GelpeyMcCoy, S.S.McCoyKheyrandish, H.H.KheyrandishPakfar, A.A.PakfarTavernier, C.C.TavernierBolze, D.D.Bolze2022-03-102022-03-102008https://publica.fraunhofer.de/handle/publica/35801310.1109/IWJT.2008.4540031In industrial environments, Technology Computer-Aided Design is used intensively for the design and optimization of new device architectures. To maintain its usefulness for future technology nodes, process simulation has to be able to predict the activation and distribution of dopants after advanced implantation and annealing schemes. Such annealing strategies will be based either on millisecond annealing at high temperatures or solid-phase epitaxial regrowth. In our contribution we will discuss diffusion and activation models for boron and arsenic. The models were calibrated for a wide range of annealing conditions, ranging from lowtemperature annealing up to millisecond flash annealing. Special emphasis is given on their implementation into Sentaurus Process and on their application for the simulation of advanced device architectures.enactivationdiffusionboronarsenicsiliconprocess simulationdevice simulationspike annealingflash annealing670conference paper