Milenkovic, N.N.MilenkovicDrießen, MarionMarionDrießenSteinhauser, BerndBerndSteinhauserLindekugel, StefanStefanLindekugelBenick, JanJanBenickHermle, MartinMartinHermleJanz, StefanStefanJanzReber, S.S.Reber2022-03-132022-03-132016https://publica.fraunhofer.de/handle/publica/39559110.1109/PVSC.2016.77494082-s2.0-85003550938Silicon wafers have still a significant contribution to the total cost of production for silicon solar cells. One cost driver when using classical wafering techniques is kerf loss. With the approach using porous silicon as a detachment layer and as a seed layer for epitaxy kerf losses can be avoided. In this work, solar cells with epitaxially grown n-type wafers are presented. The best EpiWafer-cell reaches an open circuit voltage of 657.5mV, a short circuit current of 39.6mA/cm2and a fill factor of 77%. The resulting energy conversion efficiency of 20% proves the high quality of this material.enMaterialien - Solarzellen und TechnologiePhotovoltaikSilicium-PhotovoltaikEpitaxieSi-Folien und SiC-AbscheidungenEpiWaferhigh efficiencyn-typeconference paper