Renz, A.B.A.B.RenzVavasour, O.J.O.J.VavasourRommel, MathiasMathiasRommelBaker, G.W.C.G.W.C.BakerGammon, P.M.P.M.GammonDai, T.T.DaiLi, F.F.LiAntoniou, M.M.AntoniouMawby, P.A.P.A.MawbyShah, V.A.V.A.Shah2022-10-172022-10-172022https://publica.fraunhofer.de/handle/publica/42769710.4028/p-92w3k62-s2.0-85134208336A systematic germanium (Ge) and vanadium (V) study on 4H-SiC epitaxial layers is presented. Electrical results of TLM structures which were fabricated on these layers revealed that highly-doped Ge and V-implanted layers showed extremely low specific contact resistivity, down to 2 x 10-7 Ω.cm2 . Current flow in the conducting state of Schottky barrier diodes has been successfully suppressed in some implanted layers, with highly V doped samples showing current density values of approximately 1 x 10-5 Acm-2 at 10 V. DLTS spectra reveal the presence of germanium and vanadium centers in the respective samples as well as novel peaks which are likely related to the formation of a novel GeN center.en4H-SiCepitaxyGermaniumhigh-resistivityimplantationsemi-insulatingVanadiumconference paper