Kaynak, M.M.KaynakWietstruck, M.M.WietstruckGöritz, A.A.GöritzWipf, S.T.S.T.WipfInac, M.M.InacCetindogan, B.B.CetindoganWipf, C.C.WipfKaynak, C.B.C.B.KaynakWöhrmann, M.M.WöhrmannVoges, S.S.VogesBraun, T.T.Braun2022-03-132022-03-132017https://publica.fraunhofer.de/handle/publica/40087910.1109/BCTM.2017.81129122-s2.0-85040256548This paper presents three different technology modules, integrated into a 0.13-mm SiGe BiCMOS process; namely RF-MEMS switch, microfluidics and heterogeneous integration technologies. The RF-MEMS switch module is optimized for mm-wave applications and offers superior performance figures at D-band with a wafer level encapsulated packaging option. The microfluidics module which is embedded by bonding three different wafers, provides a unique platform of fluid-electronic interaction with possibility of optical observation. Finally, the FOWLP option provides the heterogeneous integration of a single or multi chips in a single package. The BiCMOS process together with the integration of all these modules offers a technology platform to follow the More-than-Moore path for multi-functional and smart systems.en621conference paper