Schwantuschke, DirkDirkSchwantuschkeAja, B.B.AjaSeelmann-Eggebert, M.M.Seelmann-EggebertQuay, RüdigerRüdigerQuayLeuther, ArnulfArnulfLeutherBrueckner, PeterPeterBruecknerSchlechtweg, M.M.SchlechtwegMikulla, MichaelMichaelMikullaKallfass, I.I.KallfassAmbacher, OliverOliverAmbacher2022-03-122022-03-122014https://publica.fraunhofer.de/handle/publica/38446410.1109/MWSYM.2014.6848322This work discusses MMICs for the realization of spaceborn multi-Gigabit satellite communication systems. A broadband low-noise amplifier, based on a 50 nm GaAs mHEMT technology, has been developed for Q-band low-noise receivers. The amplifier shows a small-signal gain of 27.5 dB with a gain flatness of ± 1.2 dB and a noise figure below 2 dB over the entire targeted frequency range between 30 and 50 GHz. For the next generation of E-band transmitter modules, a GaN-based highpower amplifier with a small-signal gain above 15 dB between 70-75 GHz and a saturated output power exceeding 28 dBm at 74 GHz has been developed.enlow-noise amplifier (LNA)metamorphic high electron mobility transistor (mHEMT)monolothic microwave integrated circuits (MMICs)aluminium gallium nitridehigh power amplifiersconference paper