Oertel, H.H.OertelWeiß, M.M.WeißHuber, H.-L.H.-L.HuberVladimirsky, Y.Y.VladimirskyMaldonado, J.R.J.R.Maldonado2022-03-082022-03-081991https://publica.fraunhofer.de/handle/publica/318854Image intensity profiles and resist profile calculations using the XMAS simulation program are presented for storage ring X-ray lithography proximity printing under several illumination conditions. The calculations indicate the existence of a wide process window for the simultaneous replication of several kinds of subquarter-micron features.enintegrated circuit technologyphotoresistssemiconductor technologysynchrotron radiationX-ray lithography621conference paper