Hurm, V.V.HurmBenkhelifa, FouadFouadBenkhelifaDriad, RachidRachidDriadLösch, R.R.LöschMakon, R.E.R.E.MakonMassler, HermannHermannMasslerRosenzweig, JosefJosefRosenzweigSchlechtweg, M.M.SchlechtwegWalcher, H.H.Walcher2022-03-042022-03-042008https://publica.fraunhofer.de/handle/publica/21596210.1049/el:200812742-s2.0-44649120409A distributed amplifier for use as a modulator driver in next generation optical data communication systems has been manufactured using InP double-hetero bipolar transistor ( DHBT) technology with an emitter size of 0.7 x 1 mu m(2). The amplifier achieved a gain of 21 dB and a 3 dB bandwidth of 120 GHz, resulting in a gain-bandwidth product of 1.35 THz. Clearly open 100 Gbit/s 2(31)-1 non-return-to-zero pseudorandom bit sequence (NRZ PRBS) eye diagrams with an output voltage swing of 2.3 V have been measured.enInP-DHBT100 Gbit/smodulator driverModulator-Treiberdistributed amplifierverteilter Verstärker667384journal article