Riedel, S.S.RiedelPolakowski, P.P.PolakowskiMüller, J.J.Müller2022-03-052022-03-052016https://publica.fraunhofer.de/handle/publica/24511910.1063/1.49643002-s2.0-84989895788Ferroelectric properties in hafnium oxide based thin films have recovered the scaling potential for ferroelectric memories due to their ultra-thin-film- and CMOS-compatibility. However, the variety of physical phenomena connected to ferroelectricity allows a wider range of applications for these materials than ferroelectric memory. Especially mixed HfxZr1-xO2 thin films exhibit a broad compositional range of ferroelectric phase stability and provide the possibility to tailor material properties for multiple applications. Here it is shown that the limited thermal stability and thick-film capability of HfxZr1-xO2 can be overcome by a laminated approach using alumina interlayers.enjournal article