Detailed physical simulation of program disturb mechanisms in sub-50 nm NAND flash memory strings

Nguyen, C.D.C.D.NguyenKuligk, A.A.KuligkVexler, M.I.M.I.VexlerKlawitter, M.M.KlawitterBeyer, V.V.BeyerMelde, T.T.MeldeCzernohorsky, M.M.CzernohorskyMeinerzhagen, B.B.Meinerzhagen2022-03-112022-03-112010https://publica.fraunhofer.de/handle/publica/36997710.1109/SISPAD.2010.5604512The hot electron induced mechanism disturbing the stored information in inhibited bit lines during the programming of nonvolatile memories with NAND architecture is studied in detail using a new dedicated advanced physical simulation scheme for the first time.en620Detailed physical simulation of program disturb mechanisms in sub-50 nm NAND flash memory stringsconference paper