Cheng, Y.H.Y.H.ChengKupfer, H.H.KupferKrause, U.U.KrauseRichter, F.F.Richter2022-03-102022-03-102004https://publica.fraunhofer.de/handle/publica/34552810.1016/j.surfcoat.2003.06.007MgO films were deposited by a mid frequency dual magnetron reactive sputtering system composed of two identical magnetrons and powered by a sinusoidal generator. Atomic force microscopy, scanning electron microscopy, X-ray diffraction, and a diode discharge device were used to characterize surface morphology, crystalline structure, and secondary electron emission ( ) coefficient of the films, respectively. The influence of O2 flow rate with a constant Ar flow rate of 120 sccm on the structure and properties of the films was systematically studied. As the O2 flow rate is increased from 5 to 14 sccm, the intensity ratio of the (111) to (200) peak of cubic MgO phase increases significantly, leading to a change of the film texture from a combined (100) and (111) preferred orientation to a highly (111) preferred orientation. The (111) peak center shifts to a larger angle, and the full width at half maximum of the (111) peak decreases greatly, indicating a considerable decrease of defect density in the films. The increases in the relative intensity of the (111) peak and the decrease in the defect density in the films contribute to a remarkable increase in the coefficient of the films. Furthermore increase of O2 flow rate results in no significant change in the crystalline structures and the coefficient of the MgO films.enMgO filmdual magnetron sputteringO2 flow ratesecondary electron emission coefficient667670620543conference paper