Meyer, F.F.MeyerOeser, S.S.OeserGraff, A.A.GraffReisacher, E.E.ReisacherCarl, E.-R.E.-R.CarlFromm, A.A.FrommWirth, M.M.WirthGroener, L.L.GroenerBurmeister, F.F.Burmeister2022-03-0520.02.20202018https://publica.fraunhofer.de/handle/publica/25228010.1016/j.tsf.2018.01.032We present results on the investigation of the substrate bias effect on the growth behavior of iridium films deposited on A-plane sapphire by radio frequency (rf) sputtering at low substrate temperatures. Films deposited without substrate bias were compared to films deposited with simultaneous application of a second rf-plasma on the substrate. Resulting films were characterized by scanning electron microscopy, X-ray diffraction, and electron backscattering diffraction. We find that the application of an additional substrate bias has a strong effect on the growth behavior of Ir in such a way that preferential growth of iridium (001) on sapphire (11−20) at high deposition rates and at substrate temperatures as low as 350 °C becomes feasible.enbias-assisted rf-sputteringIridiumheteroepitaxyion assisted film growthlow temperature541journal article