Solomko, ValentynValentynSolomkoHsu, Ting-LiTing-LiHsuSyroiezhin, SemenSemenSyroiezhinZhang, YiwenYiwenZhangHagelauer, AmelieAmelieHagelauer2025-09-222025-09-222025-06-15https://publica.fraunhofer.de/handle/publica/49614710.1109/IMS40360.2025.11103866In this paper a highly-linear differential MOSFET-based stacked RF switch is demonstrated. The linearity improvement is achieved by stacking the switch branch well beyond the RF voltage handling requirements for minimizing odd-order nonlinear products and implementing a differential signal path on a switch die aimed at suppressing even-order nonlinear distortions. A hardware prototype of the switch arrangement operating at 850 MHz demonstrates IP3 of 81.5 dBm and 89.6 dBm in ON and OFF states respectively, approaching the level of best-in-class ohmic RF-MEMS switches. The improvement is achieved at the expense of bandwith, which is limited to 200 MHz in the presented hardware demonstrator.enRadio frequencyMicrowave measurementStacking;Nonlinear distortionLinearitySwitchesHardwareSwitching circuitsdifferential switchWireless communicationMOSFETlinearityRF switchSOI switchsolid-state switchstacked MOSFETconference paper