Under CopyrightVelarde Gonzalez, Fabio A.Fabio A.Velarde GonzalezLange, AndréAndréLangeChohan, TalhaTalhaChohanMikolajick, ThomasThomasMikolajick2022-05-0619.2.20222021https://publica.fraunhofer.de/handle/publica/41727110.1109/IIRW53245.2021.963562210.24406/publica-r-417271The increasing demand for reliable CMOS devices in high-frequency applications brings new challenges in the modeling of aging effects in transistors, with the need to also capture degradation of RF performance. In this paper, we explore the possibilities of using BSIM-IMG parameters to model HCI degradation under DC stress on a 22FDXTM FDSOI n-channel transistor. First, a selection of parameters is used to model HCI degradation and its impact on RF performance is analyzed. Furthermore, the ""extension resistance model"" within BSIM-IMG is used to broaden the model possibilities to capture RF performance degradation.enHCIFDSOIRF reliabilityS-parametersBSIM-IMG621004conference paper