Svintsov, D.A.D.A.SvintsovVyurkov, V.V.V.V.VyurkovLukichev, V.F.V.F.LukichevOrlikovsky, A.A.A.A.OrlikovskyBurenkov, A.A.BurenkovOechsner, R.R.Oechsner2022-03-042022-03-042013https://publica.fraunhofer.de/handle/publica/23237110.1134/S1063782613020218The lack of an OFF-state has been the main obstacle to the application of graphene-based transistors in digital circuits. Recently vertical graphene tunnel field-effect transistors with a low OFF-state current have been reported; however, they exhibited a relatively weak effect of gate voltage on channel conductivity. We propose a novel lateral tunnel graphene transistor with the channel conductivity effectively controlled by the gate voltage and the subthreshold slope approaching the thermionic limit. The proposed transistor has a semiconductor (dielectric) tunnel gap in the channel operated by gate and exhibits both high ON-state current inherent to graphene channels and low OFF-state current inherent to semiconductor channels.en670537537journal article