Comparative study of n-LIGBT and n-LDMOS structures on 4H-SiC

Häublein, V.V.HäubleinTemmel, G.G.TemmelMitlehner, H.H.MitlehnerRattmann, G.G.RattmannStrenger, C.C.StrengerHürner, A.A.HürnerBauer, A.J.A.J.BauerRyssel, H.H.RysselFrey, L.L.Frey2022-03-122022-03-122013https://publica.fraunhofer.de/handle/publica/38052910.4028/www.scientific.net/MSF.740-742.8872-s2.0-84874088843N-LDMOS and n-LIGBT structures were manufactured with the same dimensions on a 4H-SiC wafer in order to allow for a direct comparison. The comparison of the devices includes output and transfer characteristics, blocking characteristics, and temperature behavior.en670Comparative study of n-LIGBT and n-LDMOS structures on 4H-SiCconference paper