Kallinger, BirgitBirgitKallingerHens, PhilipPhilipHensKranert, ChristianChristianKranertAlbrecht, Kevin M.Kevin M.AlbrechtErlekampf, JürgenJürgenErlekampf2023-11-162023-11-162023https://publica.fraunhofer.de/handle/publica/45695410.4028/p-av6tdz2-s2.0-85161712511The feasibility of thin 4H-SiC layers bonded on an alternative carrier substrate for the application as substrate in SiC epitaxy is investigated. Epitaxial layers grown on such substrates are compared to those on state-of-the-art conventional substrates from different sources. The performance of the substrates is judged by the occurrence of killer defects in the epitaxial layer as analyzed using a PL scanning tool. Additional investigations on the material properties were carried out using X-ray topography and Atomic Force Microscopy, yielding information on the crystallinity, the lattice curvature, and the surface properties of the epitaxial layers.enAtomic Force MicroscopyBonded SubstrateEngineered SubstrateEpitaxial DefectsEpitaxial GrowthSubstrateX-Ray Topographybook article