Low-resistance ohmic contact formation by laser annealing of N-implanted 4H-SiC

Under CopyrightHellinger, CarstenCarstenHellingerRusch, OlegOlegRuschRommel, MathiasMathiasRommelBauer, A.J.A.J.BauerErlbacher, TobiasTobiasErlbacher2022-03-1428.11.20192019https://publica.fraunhofer.de/handle/publica/40570210.24406/publica-fhg-405702en670620530Low-resistance ohmic contact formation by laser annealing of N-implanted 4H-SiCposter