Süss, AndreasAndreasSüssHosticka, Bedrich J.Bedrich J.HostickaVogt, HolgerHolgerVogt2022-03-112022-03-112012https://publica.fraunhofer.de/handle/publica/3758372-s2.0-85007356990In this work an adaptive pixel architecture is presented that is enabling a fast and complete transfer of photogenerated charges out of the photoactive area towards the storage node. This provides an improved dynamic range. Furthermore, the proposed circuit yields a high-speed shutter capability for global shutter mode. This is mandatory for sensors designed for high frames rate and for high-speed applications where smear effects are to be avoided. The concept is presented examplarily by simulations done for a 96x6 pixel image sensor, which was later on fabricated in a 0.35 µm technology.enpinned photodiodePPDlateral drift-field photodetectorLDPDdetectorcharge transferglobal shutterhigh-speedCMOS imager621conference paper