Guo, X.X.GuoMa, X.X.MaMüller, F.F.MüllerOlivo, R.R.OlivoWu, J.J.WuNi, K.K.NiKämpfe, T.T.KämpfeLiu, Y.Y.LiuYang, H.H.YangLi, X.X.Li2022-03-152022-03-152021https://publica.fraunhofer.de/handle/publica/41288910.1109/ESSCIRC53450.2021.95678802-s2.0-85118437217This paper investigates reconfigurable physical unclonable function (PUF) design by exploiting the polarization switching variation and stochasticity in ferroelectric field-effect-transistors (FeFETs). The proposed PUFs include 1-transistor/cell (1T/C) and 2T/C designs. The denser 1T/C PUF splits random '0' and '1' states using a tactically pre-defined reference. The 2T/C PUF needs no dedicated references and obtains unbiased random states by differentiating two FeFETs under a proposed sensing error cancellation scheme. Experimental measurements have shown the uniform randomness, uniqueness, repeatability and reconfigurability of the response. Further simulations using an experimentally calibrated multi-domain FeFET model show high energy efficiency and robustness on design parameters.en621conference paper