Pilvi, T.T.PilviRitala, M.M.RitalaLeskelä, M.M.LeskeläBischoff, M.M.BischoffKaiser, U.U.KaiserKaiser, N.N.Kaiser2022-03-042022-03-042008https://publica.fraunhofer.de/handle/publica/21593410.1364/AO.47.00C2712-s2.0-50249175318A novel atomic layer deposition process for the preparation of fluoride thin films in a temperature range of 225 degrees C-400 degrees C is introduced. The crystallinity, morphology, composition, thicknesses, refractive indices, and transmittance of the films are analyzed. Low impurity levels are obtained at 350 degrees C-400 degrees C with good stoichiometry. Refractive indices of 1.34-1.42 for MgF2, 1.43 for CaF2, and 1.57-1.61 for LaF3 films are obtained.en620535journal article