Schmitt, H.H.SchmittHäublein, V.V.HäubleinBauer, A.J.A.J.BauerFrey, L.L.Frey2022-03-112022-03-112011https://publica.fraunhofer.de/handle/publica/37205110.4028/www.scientific.net/MSF.679-680.417The impact of implantation temperature and dose as well as the annealing process with and without a graphite capping layer on surface roughness, carrier mobility and specific contact resistance are investigated and compared. The use of the capping layer is proven to be particularly advantageous: (1) a deterioration of surface roughness can be avoided even for high dose implantations and (2) the specific contact resistance is reduced. Furthermore, it is shown that a capping layer prevents surface contamination during annealing.en670Influence of annealing parameters on surface roughness, mobility, and contact resistance of aluminium implanted 4H SiCconference paper