Analysis and compact modeling of lateral DMOS power devices under ESD stress conditions

Mergens, M.M.MergensWilkening, W.W.WilkeningMettler, S.S.MettlerWolf, H.H.WolfStricker, A.A.StrickerFichtner, W.W.Fichtner2022-03-092022-03-091999https://publica.fraunhofer.de/handle/publica/33373810.1109/EOSESD.1999.818983en621Analysis and compact modeling of lateral DMOS power devices under ESD stress conditionsconference paper