Krach, FlorianFlorianKrachThielen, NilsNilsThielenHeckel, ThomasThomasHeckelBauer, A.J.A.J.BauerErlbacher, TobiasTobiasErlbacherFrey, LotharLotharFrey2022-03-132022-03-132016https://publica.fraunhofer.de/handle/publica/39450910.1109/DRC.2016.7548452Passive snubber networks are especially needed in fast switching power modules to prevent overvoltage from hard switching and to minimize electromagnetic interference [1]. In a half-bridge circuit as shown in Fig. 1 (a) dissipative RC snubber networks are beneficial over single pulse capacitors as they do not generate a resonant pole in the impedance spectrum, which can be seen in Fig. 1 (b). As only a small capacitance (e.g. 4 nF) is needed to reduce the overvoltage (Fig. 1 (c)), a monolithically integrated RC snubber can be realized on a silicon chip and packaged directly on the power module substrate. An improved module performance was already demonstrated for chip snubbers with 200 V operating voltage [2]. This work shows how the device design was enhanced for high manufacturability and reliable operations in a voltage range from 600 V to 900 V.encapacitanceelectric power systemsElectrolysiselectromagnetic pulseimpedance spectrummanufacturabilitymechanical stressmodule performancemonolithically integratedoperating voltagepassive snubbersreliable operatio670620530conference paper