Niazmand, M.M.NiazmandFriedrich, D.D.FriedrichWindbracke, W.W.Windbracke2022-03-032022-03-031993https://publica.fraunhofer.de/handle/publica/18357810.1016/0167-9317(93)90105-ETwo different methods for shallow junction formation and poly-Si doping based on outdiffusion of As, B, BF2 from CoSi2 have been evaluated in complete sub 0.5 mu m NMOS and PMOS processes. p+ and n+ junctions were processed with a total depth down to 100 nm and 140 nm, respectively. The leakage current density was measured in the range of 1E-9 Acm-2 at VR=-5 V for p+ diodes. The n+ diodes exhibit an increased leakage current at 1E-5 Acm-2. In order to evaluate the device performance, transistors with effective channel lengths down to 0.25 mu m and good static device behavior have been fabricated by means of X-ray lithography. A special outdiffusion technique is able to reduce the boron penetration through thin gate oxides >or=5 nm.enchemical interdiffusioncobald compoundsion implantationleakage currentsmetallisationMOS integrated circuitssemiconductor doping621journal article