Qian, F.F.QianTemmel, G.G.TemmelSchnupp, R.R.SchnuppRyssel, H.H.Ryssel2022-03-032022-03-031999https://publica.fraunhofer.de/handle/publica/19500210.1016/S0026-2714(98)00229-7Thin silicon nitride films were prepared on silicon wafers at deposition rates of 4nm/min by r.f. reactive sputtering. Various mechanical, chemical and optical properties were investigated as a function of r.f. power, gas composition and temperature by means of AFM, RBS, XPS and an ellipsometer. Chemical stoichiometric films, with N-to-Si atomic ratio of 4:3 and refractive index of 2.0 were achieved even at room temperature. An interference filter for a UV detector with central wavelength of 254nm was manufactured based on sputtered nitride, aluminum and silicon dioxide.eninterference filteroxygen resonanceRBSr.f. reactive sputteringsilicon nitride670620530621journal article