Basler, MichaelMichaelBaslerReiner, RichardRichardReinerMönch, StefanStefanMönchGrieshaber, DanielDanielGrieshaberBenkhelifa, FouadFouadBenkhelifaQuay, RüdigerRüdigerQuay2025-01-282025-01-282024https://publica.fraunhofer.de/handle/publica/48304410.1109/WiPDAEUROPE62087.2024.10797450This work presents the design, characterization, and optimization of a monolithically integrated two-stage GaN gate driver. The individually combinable stages provide a high degree of flexibility and can realize different driver topologies. The driver is also optionally manufactured with pad over active layout. Two driver supply concepts can be implemented and evaluated. Dynamic and static on-wafer measurements are shown. Optimization of the driver is performed for various design goals such as power consumption, rise/fall time and delay time. Finally, the results are discussed in detail.enGallium nitridepower integrated circuitsmonolithic integrated circuitsdriver circuitsgate driversconference paper