Wagner, J.J.WagnerAlvarez, A.-L.A.-L.AlvarezSchmitz, J.J.SchmitzRalston, J.D.J.D.RalstonKoidl, P.P.Koidl2022-03-092022-03-091994https://publica.fraunhofer.de/handle/publica/322675We have used resonant Raman scattering by longitudinal optical (LO) phonons to analyze GaSb/GaAs and InSb/GaAs interfaces for GaSb and InSb grown on (100) GaAs by molecular-beam epitaxy. Striking differences with respect to the abruptness of the interface and the minimum layer thickness required to achieve a good crystalline quality were found. Further, the position of the Fermi level at the surface of epitaxial InSb has been studied by electric-field-induced LO phonon scattering.enGaSb/GaAsGrenzflächeInSb/GaAsinterfacemolecular beam epitaxyMolekularstrahlepitaxieOberflächesurface621667Interface formation and surface Fermi level pinning in GaSb and InSb grown on GaAs by molecular beam epitaxyBildung von Grenzflächen und Lage des Fermi-Niveaus an der Oberfläche in GaSb und InSb aufgewachsen auf GaAs mittels Molekularstrahl-Epitaxieconference paper