Rouvalis, E.E.RouvalisMetzger, C.C.MetzgerCharpentier, A.A.CharpentierAyling, T.T.AylingSchmid, S.S.SchmidGruner, M.M.GrunerHoffmann, D.D.HoffmannHamacher, M.M.HamacherFiol, G.G.FiolSchell, M.M.Schell2022-03-122022-03-122014https://publica.fraunhofer.de/handle/publica/38776110.1109/ECOC.2014.6963833We demonstrate a high performance chip-on-carrier IQ modulator based on InP MQW technology. The device achieved a 3-dB bandwidth of 40 GHz, a Vp of 2.2 V and an insertion loss of <6.5 dB over the C-band.enA low insertion loss and low Vp InP IQ modulator for advanced modulation formatsconference paper