Jatzkowski, J.J.JatzkowskiSimon-Najasek, M.M.Simon-NajasekAltmann, F.F.Altmann2022-03-122022-03-122012https://publica.fraunhofer.de/handle/publica/37736410.1016/j.microrel.2012.06.113In this paper advanced techniques for dopant contrast imaging based on Scanning Electron Microscopy will be presented. It will be shown that biasing the pn-junction of Silicon based dopant structures significantly improves the sensitivity for dopant contrast imaging thus allowing to investigate low doped regions as well as sub-mu m scaled dopant profiles of transistor and diode structures in integrated circuits. This new imaging technique is demonstrated on a defective diode structure of an image sensor device.enscanning electron microscopydopant contrast analysispn-junction of Silicon based dopant structures620conference paper