Kocher, MatthiasMatthiasKocherRommel, MathiasMathiasRommelMichalowski, P.P.MichalowskiErlbacher, TobiasTobiasErlbacher2022-03-062022-03-062022https://publica.fraunhofer.de/handle/publica/27137210.3390/ma15010050Ohmic contacts on p-doped 4H-SiC are essential for the fabrication of a wide range of power electron devices. Despite the fact that Ti/Al based ohmic contacts are routinely used for ohmic contacts on p-doped 4H-SiC, the underlying contact formation mechanisms are still not fully under-stood. TLM structures were fabricated, measured and analyzed to get a better understanding of the formation mechanism. SIMS analyses at the Ti3SiC2-SiC interface have shown a significant increase of the surface near Al concentration. By using numerical simulation it is shown that this additional surface near Al concentration is essential for the ohmic contact formation.en4H-SiCohmic contactSIMSsimulationTi3SiC2670624620530journal article