Thermal stability of thin ALD ZrO2 layers as dielectrics in deep trench DRAM devices annealed in N2 and NH3

Under CopyrightWeinreich, W.W.WeinreichLemberger, M.M.LembergerErben, E.E.ErbenHeitmann, J.J.HeitmannWilde, L.L.WildeIgnatova, V.A.V.A.IgnatovaTeichert, S.S.TeichertSchröder, U.U.SchröderOberbeck, L.L.OberbeckBauer, A.J.A.J.BauerRyssel, H.H.RysselKücher, P.P.Kücher2022-03-109.3.20102007https://publica.fraunhofer.de/handle/publica/35720610.24406/publica-fhg-357206en670620530Thermal stability of thin ALD ZrO2 layers as dielectrics in deep trench DRAM devices annealed in N2 and NH3poster