Braunstein, J.J.BraunsteinTasker, P.J.P.J.TaskerHülsmann, A.A.HülsmannKöhler, KlausKlausKöhlerBronner, WolfgangWolfgangBronnerSchlechtweg, M.M.Schlechtweg2022-03-082022-03-081993https://publica.fraunhofer.de/handle/publica/321020A set of pseudomorphic MODFETs with different epilayer structures and gate lengths between 1 mym and 0.1 mym was investigated. Functional dependencies wee derived to allow further gate length reduction for ultimate MODFET performance on GaAs.enAusgangsleitwertanalyseHEMTMODFEToutput conductance analysistransistor scalingTransistorskalierung621667Gds analysis of pseudomorphic MODFETs on GaAs substrate with lg down to 0.1 mym.Gds-Analyse pseudomorpher MODFETs auf GaAs Substrat mit Gatelängen bis zu 0.1 mymconference paper